Combined Bulk and Surface Radiation Damage Effects at Very High Fluences in Silicon Detectors: Measurements and TCAD Simulations

摘要

In this work we propose a new combined TCAD radiation damage modellingscheme, featuring both bulk and surface radiation damage effects, for theanalysis of silicon detectors aimed at the High Luminosity LHC. In particular,a surface damage model has been developed by introducing the relevantparameters (NOX, NIT) extracted from experimental measurements carried out onp-type substrate test structures after gamma irradiations at doses in the range10-500 Mrad(Si). An extended bulk model, by considering impact ionization anddeep-level cross-sections variation, was included as well. The model has beenvalidated through the comparison of the simulation findings with experimentalmeasurements carried out at very high fluences (2 10^16 1 MeV equivalentn/cm^2) thus fostering the application of this TCAD approach for the design andoptimization of the new generation of silicon detectors to be used in futureHEP experiments.